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L2 I L- LOI- ~ Sf > ",' J'9" 6 ~ =ii u ~~= 30 50 70 600 500 .=400 E .;:; E u. 300 '" i! i:I: 200L 100 o 20 Figure 34. - Stoichiometric flow requirements for a llXXl- i!i Current, mAlcm'2 ,Open-circuit wltage cm2 cell during discharge LO Molar solutions Calculated Nernstlan correction J ~ I - - - - so: 100 Multiple of stolchlometrlc flC7N 150 180 210 4L .21- o 30 Figure 35 charge, 50percent. I ~NRTt I n ~ ,I ~~) I , r+ ~e+ 60 Actual data ..J 90 120 FIC7Nrate, cm3fmin 40 60 Depth rI discharge, percent I I - Effect of reactant flC7N rate on single-ceil performance Depth of dls- Current, APDF Image | NASA Redox Storage System Development Project 1980
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